composite transistors 1 publication date: july 2003 sjj00068bed xn04381 (XN4381) silicon npn epitaxial planar type (tr1) silicon pnp epitaxial planar type (tr2) for switching/digital circuits features ? two elements incorporated into one package (transistors with built-in resistor) ? reduction of the mounting area and assembly cost by one half basic part number ? unr2213 (un2213) + unr2122 (un2122) absolute maximum ratings t a = 25 c marking symbol: cw internal connection 1 2 3 46 5 tr2 tr1 note) the part number in the parenthesis shows conventional part number. parameter symbol rating unit tr1 collector-base voltage v cbo 50 v (emitter open) collector-emitter voltage v ceo 50 v (base open) collector current i c 100 ma tr2 collector-base voltage v cbo ? 50 v (emitter open) collector-emitter voltage v ceo ? 50 v (base open) collector current i c ? 500 ma overall total power dissipation p t 300 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c unit: mm 1: collector (tr1) 4: collector (tr2) 2: base (tr2) 5: base (tr1) 3: emitter (tr2) 6: emitter (tr1) eiaj: sc-74 mini6-g1 package 2.90 1.9 0.1 0.16 +0.10 ?0.06 2.8 +0.2 ?0.3 1.1 +0.3 ?0.1 1.1 0 to 0.1 +0.2 ?0.1 1.50 (0.65) 0.4 0.2 +0.25 ?0.05 (0.95) 0.30 +0.10 ?0.05 0.50 +0.10 ?0.05 (0.95) 6 5 4 1 32 +0.20 ?0.05 5? 10?
xn04381 2 sjj00068bed ? tr2 note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. electrical characteristics t a = 25 c 3 c ? tr1 note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. common characteristics chart p t ? t a 0 160 40 120 80 0 500 200 400 100 300 total power dissipation p t ( mw ) ambient temperature t a ( c ) parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 050v collector-emitter voltage (base open) v ceo i c = 2 ma, i b = 050v collector-base cutoff current (emitter open) i cbo v cb = 50 v, i e = 0 0.1 a collector-emitter cutoff current (base open) i ceo v ce = 50 v, i b = 0 0.5 a emitter-base cutoff current (collector open) i ebo v eb = 6 v, i c = 0 0.1 ma forward current transfer ratio h fe v ce = 10 v, i c = 5 ma 80 ? collector-emitter saturation voltage v ce(sat) i c = 10 ma, i b = 0.3 ma 0.25 v output voltage high-level v oh v cc = 5 v, v b = 0.5 v, r l = 1 k ? 4.9 v output voltage low-level v ol v cc = 5 v, v b = 3.5 v, r l = 1 k ? 0.2 v input resistance r 1 ? 30% 47 + 30% k ? resistance ratio r 1 / r 2 0.8 1.0 1.2 ? transition frequency f t v cb = 10 v, i e = ? 2 ma, f = 200 mhz 150 mhz parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = ? 10 a, i e = 0 ? 50 v collector-emitter voltage (base open) v ceo i c = ? 2 ma, i b = 0 ? 50 v collector-base cutoff current (emitter open) i cbo v cb = ? 50 v, i e = 0 ? 1 a collector-emitter cutoff current (base open) i ceo v ce = ? 50 v, i b = 0 ? 1 a emitter-base cutoff current (collector open) i ebo v eb = ? 6 v, i c = 0 ? 2ma forward current transfer ratio h fe v ce = ? 10 v, i c = ? 100 ma 50 ? collector-emitter saturation voltage v ce(sat) i c = ? 100 ma, i b = ? 5 ma ? 0.25 v output voltage high-level v oh v cc = ? 5 v, v b = ? 0.5 v, r l = 500 ?? 4.9 v output voltage low-level v ol v cc = ? 5 v, v b = ? 3.5 v, r l = 500 ?? 0.2 v input resistance r 1 ? 30% 4.7 + 30% k ? resistance ratio r 1 / r 2 0.8 1.0 1.2 ? transition frequency f t v cb = ? 10 v, i e = 50 ma, f = 200 mhz 200 mhz
xn04381 3 sjj00068bed characteristics charts of tr1 i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o 0 012 210 48 6 40 120 80 160 collector-emitter voltage v ce (v) collector current i c (ma) t a = 25 c i b = 1.0 ma 0.1 ma 0.2 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma 0.01 0.1 0.1 1 10 100 1 10 100 collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) i c / i b = 10 t a = 75 c 25 c ? 25 c 0 1 100 200 300 400 10 100 1 000 forward current transfer ratio h fe collector current i c (ma) v ce = 10 v t a = 75 c 25 c ? 25 c 0 0.1 6 5 4 3 2 1 1 10 100 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) 1 0.4 10 10 2 10 3 10 4 1.4 1.2 1.0 0.8 0.6 output current i o ( a) input voltage v in (v) v o = 5 v t a = 25 c 0.01 0.1 0.1 1 10 100 1 10 100 input voltage v in (v) output current i o (ma) v o = 0.2 v t a = 25 c
xn04381 4 sjj00068bed characteristics charts of tr2 c ob ? v cb i o ? v in v in ? i o i c ? v ce v ce(sat) ? i c h fe ? i c 0 0 ? 12 ? 2 ? 10 ? 4 ? 8 ? 6 ? 300 ? 250 ? 200 ? 150 ? 100 ? 50 t a = 25 c i b = ? 1.0 ma ? 0.1 ma ? 0.2 ma ? 0.3 ma ? 0.4 ma ? 0.5 ma ? 0.6 ma ? 0.7 ma ? 0.8 ma ? 0.9 ma collector-emitter voltage v ce (v) collector current i c (ma) ? 0.01 ? 1 ? 0.1 ? 1 ? 10 ? 100 ? 10 ? 100 ? 1 000 collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) i c / i b = 10 t a = 75 c 25 c ? 25 c 0 ? 1 40 80 120 160 ? 10 ? 100 ? 1 000 forward current transfer ratio h fe collector current i c (ma) v ce = ? 10 v t a = 75 c 25 c ? 25 c 0 ? 0.1 24 20 16 12 8 4 ? 1 ? 10 ? 100 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) f = 1 mhz i e = 0 t a = 25 c ? 1 ? 0.4 ? 10 ? 10 2 ? 10 3 ? 10 4 ? 1.4 ? 1.2 ? 1.0 ? 0.8 ? 0.6 output current i o ( a) input voltage v in (v) v o = ? 5 v t a = 25 c ? 0.01 ? 0.1 ? 0.1 ? 1 ? 10 ? 100 ? 1 ? 10 ? 100 v o = ? 0.2 v t a = 25 c input voltage v in (v) output current i o (ma)
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